Hydrogenated microcrystalline silicon films have been deposited by RF-PECVD varying the RF power from 20 to 200 W, using a silane concentration of 3% and a total flow rate of 206 sccm. The film properties do not change appreciably in a wide range of RF power: dark conductivity, hydrogen content and grain dimension are approximately constant, 10- 4 S/cm, 2 at.%, 10 nm, respectively. A deposition rate of 0.5 nm/s has been reached at the RF power of 150 W. Films deposited at high deposition rate show, in the near infrared region, a clear enhancement of optical absorption due to the light scattering and low defect absorption.
Microcrystalline silicon thin films grown at high deposition rate by PECVD
PERNA, GIUSEPPE;
2006-01-01
Abstract
Hydrogenated microcrystalline silicon films have been deposited by RF-PECVD varying the RF power from 20 to 200 W, using a silane concentration of 3% and a total flow rate of 206 sccm. The film properties do not change appreciably in a wide range of RF power: dark conductivity, hydrogen content and grain dimension are approximately constant, 10- 4 S/cm, 2 at.%, 10 nm, respectively. A deposition rate of 0.5 nm/s has been reached at the RF power of 150 W. Films deposited at high deposition rate show, in the near infrared region, a clear enhancement of optical absorption due to the light scattering and low defect absorption.File in questo prodotto:
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