We have investigated the photoluminescence of Teflon-like films obtained by ion-beam sputtering. We show that Teflon material used for the target contains pi-C bonds. The sputtering increases the number of these bonds inside the films. By changing some experimental parameters it is possible to control centres of radiative recombination obtaining also a Teflon film without this centres.
Photoluminescence anaysis of Teflon bulk and Teflon-like films grown by ion beam sputtering
PERNA, GIUSEPPE;CAPOZZI, VITO GIACOMO;
2000-01-01
Abstract
We have investigated the photoluminescence of Teflon-like films obtained by ion-beam sputtering. We show that Teflon material used for the target contains pi-C bonds. The sputtering increases the number of these bonds inside the films. By changing some experimental parameters it is possible to control centres of radiative recombination obtaining also a Teflon film without this centres.File in questo prodotto:
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