By employing pulsed-laser deposition, thin-film GaAs on glass has been deposited. X-ray analysis showed that the material has a polycrystalline texture with a crystal size of 58 nm. The absorption of the film has been measured by standard constant photocurrent measurements and the photocurrent itself with the lock-in technique. Absorption and photocurrent have been straightforwardly modelled with the crystalline density of state function and Urbach’s tail. The work reveals the capability of pulsed-laser deposition to form high-quality GaAs films on glass for optical applications.
X-ray, Absorption and Photocurrent Properties of Thin Films GaAs on Glass Formed by Pulsed-laser Deposition
CAPOZZI, VITO GIACOMO;
2004-01-01
Abstract
By employing pulsed-laser deposition, thin-film GaAs on glass has been deposited. X-ray analysis showed that the material has a polycrystalline texture with a crystal size of 58 nm. The absorption of the film has been measured by standard constant photocurrent measurements and the photocurrent itself with the lock-in technique. Absorption and photocurrent have been straightforwardly modelled with the crystalline density of state function and Urbach’s tail. The work reveals the capability of pulsed-laser deposition to form high-quality GaAs films on glass for optical applications.File in questo prodotto:
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