Photocurrent spectra of a 50 angstrom period superlattice (SL) of GaAs/Al3Ga7As, were measured in the range 14-300 K in a low electric field regime. The energy gap between the heavy-hole and electron extended states of the SL shows the same dependence on temperature as its bulk components. The decrease of photocurrent in the range 100-300 K indicates transport in the extended states of the SL. Different photo-ionization of DX centres existing in the n-doped layers of Al3Ga7As causes an effective asymmetry in the n-i-n structure.
Photocurrent Spectroscopy in n-i-n GaAs/Al(0.3)GaAs(0.7) Short Period Superlattices
CAPOZZI, VITO GIACOMO;
1995-01-01
Abstract
Photocurrent spectra of a 50 angstrom period superlattice (SL) of GaAs/Al3Ga7As, were measured in the range 14-300 K in a low electric field regime. The energy gap between the heavy-hole and electron extended states of the SL shows the same dependence on temperature as its bulk components. The decrease of photocurrent in the range 100-300 K indicates transport in the extended states of the SL. Different photo-ionization of DX centres existing in the n-doped layers of Al3Ga7As causes an effective asymmetry in the n-i-n structure.File in questo prodotto:
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