The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO2) with different back-gate bias configurations, from -8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide.
Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
Caselle M;
2024-01-01
Abstract
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO2) with different back-gate bias configurations, from -8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
