Lifetime and Diffusion Length of Electrons in p-GaSe by Photovoltaic Effect Measurements at Room Temperature

The determination of the minority carrier diffusion length, Ln, and lifetime, τn, in p-GaSe has been accomplished by measuring both the short-circuit current, Isc, as a function of the wavelength of the incident light, and the transient photovoltaic effect decay time. The value so obtained for τn is 18.9 μs (as a mean value), while for Ln, the values ranged from 14.4 to 18.8 μm. Since both Ln and τn are obtained by using two different techniques, the determination of the minority carrier mobility is clearly possible.