Detailed photoluminescence spectra of GaSe at a bath temperature of 2K were measured at electron-hole densities ranging from below to above the screening limit for the free direct excitons. Special care was used to reduce the effects of spatial carrier inhomogeneity. We observe a continuous transition from exciton recombination processes to an e-h plasna emission. We compare our observations with the results of a simplified first order theory which accounts for electron-hole correlation effects. The observed red shift of the fundamental direct exciton level is well reproduced by our theoretical calculations.
Analysis of the Excitonic Mott Transition in GaSe
CAPOZZI, VITO GIACOMO;
1987-01-01
Abstract
Detailed photoluminescence spectra of GaSe at a bath temperature of 2K were measured at electron-hole densities ranging from below to above the screening limit for the free direct excitons. Special care was used to reduce the effects of spatial carrier inhomogeneity. We observe a continuous transition from exciton recombination processes to an e-h plasna emission. We compare our observations with the results of a simplified first order theory which accounts for electron-hole correlation effects. The observed red shift of the fundamental direct exciton level is well reproduced by our theoretical calculations.File in questo prodotto:
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