The dynamics of direct and indirect excitons, either free or localized by the layer stacking disorder is studied in GaSe at temperatures from 2 to 150 K and as a fünction of the excitation energy.
Dynamics of Excitons in GaSe as a Function of Temperature
CAPOZZI, VITO GIACOMO;
1985-01-01
Abstract
The dynamics of direct and indirect excitons, either free or localized by the layer stacking disorder is studied in GaSe at temperatures from 2 to 150 K and as a fünction of the excitation energy.File in questo prodotto:
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