We measured selective luminescence and excitation spectra at 80 K over the energy range of the direct absorption features in the layer semiconductor GaSe. Fluorescence line-narrowing of the excitonic band and shift of the emission peak, with respect to the exciting energy, of n=1 and n=2 excitonic recombinations were observed. These effects are connected to excitons localized by the presence of stacking disorder of layers.
Luminescence of Selective Optical Pumping of Excitons in GaSe
CAPOZZI, VITO GIACOMO;
1984-01-01
Abstract
We measured selective luminescence and excitation spectra at 80 K over the energy range of the direct absorption features in the layer semiconductor GaSe. Fluorescence line-narrowing of the excitonic band and shift of the emission peak, with respect to the exciting energy, of n=1 and n=2 excitonic recombinations were observed. These effects are connected to excitons localized by the presence of stacking disorder of layers.File in questo prodotto:
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