Space-charge-limited current measurements in GaSe crystals are made at different temperatures and in samples with various doping characteristics. The experimental results suggest that the trapping level structure is highly dependent on chemical purity of the samples. Single deep trap levels are prominent in the purest samples, while a continuous distribution of traps is present in the heavily doped ones. The temperature dependence of space-charge-limited current measurements is important because it helps to identify the pertinent physical model. A very accurate determination of trap level energies is obtained from the temperature dependence over a wide range of the energy gap.
Space-Charge-Limited Currents in GaSe at Different Temperatures
CAPOZZI, VITO GIACOMO;
1976-01-01
Abstract
Space-charge-limited current measurements in GaSe crystals are made at different temperatures and in samples with various doping characteristics. The experimental results suggest that the trapping level structure is highly dependent on chemical purity of the samples. Single deep trap levels are prominent in the purest samples, while a continuous distribution of traps is present in the heavily doped ones. The temperature dependence of space-charge-limited current measurements is important because it helps to identify the pertinent physical model. A very accurate determination of trap level energies is obtained from the temperature dependence over a wide range of the energy gap.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
