Deposition of thin films of ZnSe has been performed by means of pulsed laser deposition (PLD) technique. by varying the pulsed laser fluence. X-ray diffraction spectra shows that the films grow in the cubic phase, with a preferential orientation along the (10 0) direction. Reflectance spectra from 10 to 300 K in the excitonic resonance region have been analysed according to the classical oscillator model. The parameters that describe the temperature variation of the energy (including electron-phonon interaction and thermal expansion effects) and broadening of the bandgap have been evaluated. All the deposited films show photoluminescence at room temperature. This is promising for optoelectronic application of PLD technique.
Structural and optical properties of pulsed laser deposited ZnSe films
PERNA, GIUSEPPE;CAPOZZI, VITO GIACOMO;
2002-01-01
Abstract
Deposition of thin films of ZnSe has been performed by means of pulsed laser deposition (PLD) technique. by varying the pulsed laser fluence. X-ray diffraction spectra shows that the films grow in the cubic phase, with a preferential orientation along the (10 0) direction. Reflectance spectra from 10 to 300 K in the excitonic resonance region have been analysed according to the classical oscillator model. The parameters that describe the temperature variation of the energy (including electron-phonon interaction and thermal expansion effects) and broadening of the bandgap have been evaluated. All the deposited films show photoluminescence at room temperature. This is promising for optoelectronic application of PLD technique.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
