Photoluminescence properties of InP epilayers grown on InP(100) substrate by trimethylindium and plasma-activated PH3 are presented. A blue-shift of the spectral position of the intrinsic emission band is observed on increasing the temperature of the homoepitaxial films. Furthermore, an enhancement of the integrated PL intensity occurs in such films with respect to those grown by a conventional MOCVD process. Radiative transitions from localized levels related to structural disorder (clustering) induced by the plasma-assisted epigrowth is proposed to account for these two particular features observed in the InP films and mainly due to hydrogen-atom-related phenomena.
Photoluminescence properties of homoepitaxial InP films grown by remote plasma MOCVD technique
PERNA, GIUSEPPE;CAPOZZI, VITO GIACOMO;
2000-01-01
Abstract
Photoluminescence properties of InP epilayers grown on InP(100) substrate by trimethylindium and plasma-activated PH3 are presented. A blue-shift of the spectral position of the intrinsic emission band is observed on increasing the temperature of the homoepitaxial films. Furthermore, an enhancement of the integrated PL intensity occurs in such films with respect to those grown by a conventional MOCVD process. Radiative transitions from localized levels related to structural disorder (clustering) induced by the plasma-assisted epigrowth is proposed to account for these two particular features observed in the InP films and mainly due to hydrogen-atom-related phenomena.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
