Photoluminescence (PL) spectra of C-60 films deposited on Si substrates have been measured from 10 to 300 K and as a function of laser excitation intensity. Recombination of self-trapped excitons and their phonon replicas, as well as X-trap-related emissions, are the main features of the PL spectra. The influence of the deposition parameters, namely deposition rate and substrate temperature, on the luminescence efficiency of the C-60 films have been investigated. Low substrate temperature produces a lowering of the PL efficiency, whereas an increase of the deposition rate causes an increase of the X-trap emission.
Photoluminescence properties of C60 films deposited on silicon substrate
CAPOZZI, VITO GIACOMO;PERNA, GIUSEPPE;
2000-01-01
Abstract
Photoluminescence (PL) spectra of C-60 films deposited on Si substrates have been measured from 10 to 300 K and as a function of laser excitation intensity. Recombination of self-trapped excitons and their phonon replicas, as well as X-trap-related emissions, are the main features of the PL spectra. The influence of the deposition parameters, namely deposition rate and substrate temperature, on the luminescence efficiency of the C-60 films have been investigated. Low substrate temperature produces a lowering of the PL efficiency, whereas an increase of the deposition rate causes an increase of the X-trap emission.File in questo prodotto:
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