Optical properties of CdSe and CdS films, deposited on sapphire substrate by means of pulsed laser ablation technique, have been investigated in order to study the effect of such a transparent substrate on the photoluminescence efficiency of the deposited epilayers. CdSe and CdS films present intrinsic (excitonic) emission at low temperature, differently from the same films deposited on quartz. The temperature dependence of the excitonic energy has been analyzed taking into account the contribution of both the thermal dilatation and electron-phonon interaction.
Reflectance and photoluminescence characterization of CdS and CdSe heteroepitaxial films deposited by laser ablation technique
PERNA, GIUSEPPE;CAPOZZI, VITO GIACOMO;
2001-01-01
Abstract
Optical properties of CdSe and CdS films, deposited on sapphire substrate by means of pulsed laser ablation technique, have been investigated in order to study the effect of such a transparent substrate on the photoluminescence efficiency of the deposited epilayers. CdSe and CdS films present intrinsic (excitonic) emission at low temperature, differently from the same films deposited on quartz. The temperature dependence of the excitonic energy has been analyzed taking into account the contribution of both the thermal dilatation and electron-phonon interaction.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
