GalnSe(2) single crystals have been grown and characterized by experimental techniques such as high-resolution transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy and optical and electrical measurements. The samples were prepared in single-crystal form from a melt. The structural analysis indicates that GalnSe(2) has a hexagonal structure, and confirms the high quality of the produced single crystals. Quantitative information on electrical and optical properties of single-crystalline GalnSe(2) was obtained by investigating the resistivity and photoluminescence as a function of the temperature and excitation intensity.
The growth and characterization of GaInSe2 single Crystals
CAPOZZI, VITO GIACOMO;PERNA, GIUSEPPE;
1997-01-01
Abstract
GalnSe(2) single crystals have been grown and characterized by experimental techniques such as high-resolution transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy and optical and electrical measurements. The samples were prepared in single-crystal form from a melt. The structural analysis indicates that GalnSe(2) has a hexagonal structure, and confirms the high quality of the produced single crystals. Quantitative information on electrical and optical properties of single-crystalline GalnSe(2) was obtained by investigating the resistivity and photoluminescence as a function of the temperature and excitation intensity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
