Reflectance spectra of GaAs/Al0.3Ga0.7As disordered superlattices (d-SL) are investigated. The experimental results are compared with numerical simulations obtained by means of transfer matrix method. The agreement between the measured spectra and the numerical calculations indicate the validity of the model we used, confirming the existence of a disordered-induced fine structure and the formation of sub-minibands of localized states in d-SL. The temperature dependence of the reflectance spectra evidenced an anomalous splitting of some features near the band edge, caused by space charge separation.
Reflectance of GaAs/(AlGa)As Disordered Superlattices
CAPOZZI, VITO GIACOMO;PERNA, GIUSEPPE;
1996-01-01
Abstract
Reflectance spectra of GaAs/Al0.3Ga0.7As disordered superlattices (d-SL) are investigated. The experimental results are compared with numerical simulations obtained by means of transfer matrix method. The agreement between the measured spectra and the numerical calculations indicate the validity of the model we used, confirming the existence of a disordered-induced fine structure and the formation of sub-minibands of localized states in d-SL. The temperature dependence of the reflectance spectra evidenced an anomalous splitting of some features near the band edge, caused by space charge separation.File in questo prodotto:
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