The laser ablation technique has been successfully used in our laboratory for the deposition of CdSe and CdTe/CdSe multilayers on Si(100) and Si(111) substrates, X-ray analysis showed that CdSe/Si(111) and CdSe/Si(100) films were grown in the hexagonal phase. Their orientation changed from (100) to (002) by only varying the substrate temperature from 200 degrees C to 400 degrees C. The same hexagonal growth was obtained in multilayers of CdSe and CdTe on Si(111). Photoluminescence spectra of CdSe films were studied as a function of the excitonic features and results on the extrinsic luminescence are reported.
Laser Ablation of Highly Oriented CdSe Thin Films and CdSe/CdTe Multilayers on Silicon Substrates
CAPOZZI, VITO GIACOMO;PERNA, GIUSEPPE
1996-01-01
Abstract
The laser ablation technique has been successfully used in our laboratory for the deposition of CdSe and CdTe/CdSe multilayers on Si(100) and Si(111) substrates, X-ray analysis showed that CdSe/Si(111) and CdSe/Si(100) films were grown in the hexagonal phase. Their orientation changed from (100) to (002) by only varying the substrate temperature from 200 degrees C to 400 degrees C. The same hexagonal growth was obtained in multilayers of CdSe and CdTe on Si(111). Photoluminescence spectra of CdSe films were studied as a function of the excitonic features and results on the extrinsic luminescence are reported.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
