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EnglishZnSe thin films were deposited by pulsed laser ablation on quartz substrate. The filmswere investigated by different characterization techniques, such as X-ray diffraction, Raman microspectroscopy, absorption, reflectivity, and photoluminescence spectroscopy. The XRD analysis showed the formation of cubic phase polycrystalline films. The Raman spectra confirmed the formation of ZnSe by the presence of TO and LO peaks at 202 cm−1 and 252 cm−1, respectively. The analysis of absorption and reflectivity measurements permits evaluation of the band gap and excitonic energy at low temperature and the temperature dependence of the energy gap. The photoluminescence measurements indicated the possibility of obtaining intrinsic band-band radiative emission up to room temperature.
| Titolo: | Temperature dependence of the optical properties of ZnSe films deposited on quartz substrate | |
| Autori: | ||
| Data di pubblicazione: | 2006 | |
| Rivista: | ||
| Abstract: | ZnSe thin films were deposited by pulsed laser ablation on quartz substrate. The filmswere investigated by different characterization techniques, such as X-ray diffraction, Raman microspectroscopy, absorption, reflectivity, and photoluminescence spectroscopy. The XRD analysis showed the formation of cubic phase polycrystalline films. The Raman spectra confirmed the formation of ZnSe by the presence of TO and LO peaks at 202 cm−1 and 252 cm−1, respectively. The analysis of absorption and reflectivity measurements permits evaluation of the band gap and excitonic energy at low temperature and the temperature dependence of the energy gap. The photoluminescence measurements indicated the possibility of obtaining intrinsic band-band radiative emission up to room temperature. | |
| Handle: | http://hdl.handle.net/11369/15197 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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