Photoluminescence spectra of GaSe doped with Cu atoms by the ion implantation technique are reported. They are similar to spectra of GaSe doped by chemical methods. The analysis of spectra of crystals doped with different Cu concentrations confirms the defect level structure of GaSe(Cu) and also provides further evidence supporting the recombination kinetic model which explains the excitation intensity and temperature dependence of indirect excitonic lines.
Photoluminescence of GaSe(Cu) Doped by Ion Implantation
CAPOZZI, VITO GIACOMO;
1981-01-01
Abstract
Photoluminescence spectra of GaSe doped with Cu atoms by the ion implantation technique are reported. They are similar to spectra of GaSe doped by chemical methods. The analysis of spectra of crystals doped with different Cu concentrations confirms the defect level structure of GaSe(Cu) and also provides further evidence supporting the recombination kinetic model which explains the excitation intensity and temperature dependence of indirect excitonic lines.File in questo prodotto:
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