A detailed photoluminescence investigation of the thermal red-shift and broadening of the excitonic line of CdSe films grown on bulk GaAs substrate by laser ablation technique is presented. Material parameters related to the electron-phonon interaction have been obtained by fitting the experimental data to phenomenological models. The relative contribution of both acoustic and optical phonons to the band gap shrinkage and the dominant role of impurity scattering, at low temperatures, in the excitonic line broadening are discussed.
Temperature Dependence of the Red-shift and Broadening of the Exciton Line in CdSe/GaAs Laser Ablated Heterostructures
PERNA, GIUSEPPE;CAPOZZI, VITO GIACOMO;
1998-01-01
Abstract
A detailed photoluminescence investigation of the thermal red-shift and broadening of the excitonic line of CdSe films grown on bulk GaAs substrate by laser ablation technique is presented. Material parameters related to the electron-phonon interaction have been obtained by fitting the experimental data to phenomenological models. The relative contribution of both acoustic and optical phonons to the band gap shrinkage and the dominant role of impurity scattering, at low temperatures, in the excitonic line broadening are discussed.File in questo prodotto:
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